Module 72 min

Metal Fill & Density Rules

CMP (Chemical Mechanical Polishing) planarizes each metal layer. Non-uniform metal density causes uneven polishing: sparse areas "dish" (metal removed excessive

CMP (Chemical Mechanical Polishing) planarizes each metal layer. Non-uniform metal density causes uneven polishing: sparse areas "dish" (metal removed excessively) and dense areas retain more. Both cause via formation failures and reliability issues.

ParameterTypical RangeEffect of Violation
Minimum metal density20–30% per check windowDishing: metal recedes below ILD surface → via misses metal → open circuit
Maximum metal density70–80% per check windowErosion: ILD polished away → shorts between layers, increased leakage
Check window size50×50 µm – 200×200 µmFoundry-defined. Smaller windows = tighter local control
Fill shape min size≥ Wmin per layerToo-small fill shapes violate width rules themselves
Fill to signal spacing≥ 2× normal spacingFill too close to signal → coupling capacitance → SI issues
SHELL - Calibre Metal Fill Insertion
# Run Calibre fill (after routing, before final DRC)
calibre -drc -hier -runset fill_runset.svrf

# fill_runset.svrf key options:
LAYOUT SYSTEM     GDSII
LAYOUT PATH       "chip_prefill.gds"
DRC RESULTS DATABASE "fill_out.gds"    ; GDS with fill added

# Fill insertion is non-electrical  -  it must NOT connect to any signal net
# Most foundry fill decks insert floating unconnected metal polygons
# Some advanced PDKs insert connected fill for better SI (optional)

# After fill: re-run DRC to verify:
# 1. Fill shapes themselves don't create new DRC violations
# 2. Fill-to-signal spacing rules satisfied
# 3. Density targets met on all layers